Navitas’ Next GaN IC Powers vivo’s iQOO 9 Pro Smartphone

Navitas' Next GaN IC Powers vivo's iQOO 9 Pro Smartphone

GaNFast™ power IC with GaNSense™ technology delivers iQOO's fastest, smallest 120W charger in new ultra-fast market category

El Segundo, California: January 18th, 2022: Navitas today officially announced that its next-generation GaNFast power IC drives the 120W ultra-fast charger supplied 'in-box' with vivo's iQOO-brand flagship iQOO 9 Pro mobile phone. The 9 Pro's powerful 4,700 mAhr battery charges from 0-100% in only 19 lightning-fast minutes, and at only 60.5 x 52.5 x28.8 mm (92 cc), the charger is 26% smaller than the previous generation, reaching a stunning 1.3 W/cc power density.

At a featherweight 135 g, the iQOO 120W GaNFast charger, is another milestone in the history of GaN charging, meaning it is similar in size and weight to regular 65W chargers. Super-high power, compact and portable, this charging product brings more charging convenience to consumers.

Gallium nitride is a next-generation power semiconductor technology, which runs 20 times faster than traditional silicon. Compared with traditional silicon chargers, gallium nitride chargers can achieve 3x the power or 3x faster charging with up to 40% energy savings in just half the size and weight of legacy silicon solutions. As the industry leader in GaN power ICs, Navitas' next-generation GaNSense technology integrates real-time, accurate and fast sensing of system parameters, including current and temperature, and achieves patent-pending lossless current-sensing. Integrated GaNSense products are 6x faster than discrete GaN power chips, and take only 30 ns from detection to protection. GaNSense technology delivers an additional 10% energy-savings, further reduces the number of external components, and reduces system size. In addition to enhanced charging performance, GaNFast chargers enable up to 30% reduction in CO2 footprint vs. silicon chargers - another reason why Navitas is favored by global top-tier mobile phone manufacturers.